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| IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor Feature * N-Channel * Enhancement mode * Logic Level * 175C operating temperature * Avalanche rated * dv/dt rated * Green Package (lead free) Product Summary VDS 100 V RDS(on) ID P-TO262-3-1 P-TO263-3-2 16 70 m A P-TO220-3-1 2 1 P-TO220-3-1 23 Type IPP70N10SL-16 IPB70N10SL-16 IPI70N10SL-16 Package PG-TO220-3-1 PG-TO263-3-2 PG-TO262-3-1 Ordering Code SP0002-25708 SP0002-25700 SP000225705 Marking N10L16 N10L16 N10L-16 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 70 Unit A Pulsed drain current TC=25C ID puls EAS 50 280 700 25 6 20 250 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID =70 A , VDD=25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =70A, VDS =0V, di/dt=200A/s EAR dv/dt Gate source voltage Power dissipation TC=25C VGS Ptot T j , Tstg Page 1 Operating and storage temperature IEC climatic category; DIN IEC 68-1 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) Symbol min. Values typ. max. 0.6 62.5 62 40 Unit RthJC RthJA RthJA - K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. Values typ. 1.6 max. 2 Unit V(BR)DSS VGS(th) IDSS 100 1.2 V Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25C VDS =100V, VGS =0V, Tj =150C A 0.1 10 14 10 1 100 100 25 16 nA m - Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RDS(on) Drain-source on-state resistance VGS =4.5V, ID =50A Drain-source on-state resistance VGS =10V, ID =50A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol Conditions min. Values typ. 65 3630 640 345 70 250 250 95 max. 4540 800 430 105 375 375 145 ns S pF Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =50A 30 - VGS =0V, VDS =25V, f=1MHz VDD =50V, VGS=4.5V, ID =70A, RG=1.3 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Qgs Qgd Qg VDD =80V, ID=70A VDD =80V, ID=70A, VGS =0 to 10V - 10 34 160 3.22 15 51 240 - nC V(plateau) VDD =80V, ID=70A IS TC=25C V - 1.2 100 600 70 280 1.8 150 900 A Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr VGS =0V, IF =140A VR =50V, IF =lS , diF /dt=100A/s - V ns nC Qrr Page 3 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 1 Power dissipation Ptot = f (TC) 280 SPP70N10L 2 Drain current ID = f (TC ) parameter: VGS 10 V SPP70N10L 75 W 240 220 200 A 60 55 50 Ptot ID 20 40 60 80 100 120 140 160 C 190 180 160 140 120 100 80 60 40 20 0 0 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 SPP70N10L 4 Max. transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP70N10L K/W A tp = 18.0s 10 0 10 2 ZthJC 10 -1 ID /I D 100 s =V DS 10 -2 D = 0.50 0.20 1 ms 10 1 R DS (on ) 10 -3 0.10 0.05 0.02 10 ms 10 -4 single pulse 0.01 DC 10 0 10 -1 10 0 10 1 10 2 V 10 3 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 5 Typ. output characteristic ID = f (VDS ); Tj =25C parameter: tp = 80 s 170 SPP70N10L 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 80 SPP70N10L Ptot = 250W ki l j hg f VGS [V] a b A m 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 b e c d 140 120 c dd e f g R DS(on) 60 ID 50 100 80 60 40 20 a h 40 c i j k l 30 20 b 10 V GS [V] = b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 e f gh ij kl k l 8.0 10.0 0 0 1 2 3 4 V 5.5 0 0 20 40 60 80 100 A 130 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 70 A 60 55 50 8 Typ. forward transconductance gfs = f(ID); Tj =25C parameter: gfs 60 S 50 45 ID 45 40 35 30 25 20 g fs V 40 35 30 25 20 15 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 10 5 0 0 10 20 30 40 A 55 VGS ID Page 5 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 50 A, VGS = 4.5 V 110 SPP70N10L 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS , ID = 2 mA 3 V m 90 2.4 R DS(on) VGS(th) 80 70 60 50 40 30 20 typ 10 0 -60 -20 20 60 100 140 C 2.2 2 1.8 1.6 1.4 1.2 max 98% 1 0.8 0.6 0.4 0.2 200 0 -60 -20 20 60 100 140 C min typ 200 Tj Tj 11 Typ. capacitances C = f (VDS ) parameter: VGS =0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPP70N10L A pF Ciss 10 2 C 10 3 Coss Crss IF 10 1 T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 10 2 0 5 10 15 20 25 30 V 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 70 A , VDD = 25 V, RGS = 25 700 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 70 A pulsed 16 SPP70N10L mJ V 600 550 500 12 EAS 450 400 350 300 250 200 VGS 10 0,2 VDS max 0,8 VDS max 8 6 4 150 100 50 0 25 45 65 85 105 125 145 2 C Tj 185 0 0 40 80 120 160 200 nC 280 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP70N10L 120 V V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 C 200 Tj Page 7 2006-02-14 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support Page 8 2006-02-14 |
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